Monolithic Perovskite/Silicon Tandem Solar Cells Fabricated Using Industrial p‐Type Polycrystalline Silicon on Oxide/Passivated Emitter and Rear Cell Silicon Bottom Cell Technology

Combining a perovskite top cell with conventional passivated emitter and rear (PERC) silicon bottom in monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of single‐junction technology. Proof‐of‐concept perovskite/silicon solar cells using high‐temperature stable featuring polycrystalline on oxide (POLO) front junction PERC‐type side local aluminum‐p + contacts are reported. For this PERC/POLO cell, process flow that compatible industrial, mainstream PERC technology implemented. Top connected via tin‐doped indium recombination layer. The layer formation POLO optimized by postdeposition annealing mitigation sputter damage. p−i−n architecture. demonstrate PCE up 21.3%. Based experimental findings supporting optical simulations, major performance enhancements optimization identified potential 29.5% for these PERC‐like estimated.